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Growth and Characterization of High Quality a-plane InGaN/GaN Single Quantum Well Structure Grown by Multi-buffer Layer Technique
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김은규 | - |
| dc.date.accessioned | 2021-08-03T21:19:29Z | - |
| dc.date.available | 2021-08-03T21:19:29Z | - |
| dc.date.created | 2021-06-30 | - |
| dc.date.issued | 2009-10-08 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/60812 | - |
| dc.publisher | The Japan Society of Applied Physics | - |
| dc.title | Growth and Characterization of High Quality a-plane InGaN/GaN Single Quantum Well Structure Grown by Multi-buffer Layer Technique | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 김은규 | - |
| dc.identifier.bibliographicCitation | 2009 Inter. Conf. on Solid State Devices and Materials | - |
| dc.relation.isPartOf | 2009 Inter. Conf. on Solid State Devices and Materials | - |
| dc.citation.title | 2009 Inter. Conf. on Solid State Devices and Materials | - |
| dc.citation.conferencePlace | Sendai, Japan | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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Collections - 서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers
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