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Growth and Characterization of High Quality a-plane InGaN/GaN Single Quantum Well Structure Grown by Multi-buffer Layer Technique
- Authors
- 김은규
- Issue Date
- 8-Oct-2009
- Publisher
- The Japan Society of Applied Physics
- Citation
- 2009 Inter. Conf. on Solid State Devices and Materials
- Conference Name
- 2009 Inter. Conf. on Solid State Devices and Materials
- Place
- Sendai, Japan
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Collections - 서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers
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