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Post-Annealing effect on the electrical properties of top-gated SWNT network transistors
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박완준 | - |
| dc.date.accessioned | 2021-08-03T21:19:38Z | - |
| dc.date.available | 2021-08-03T21:19:38Z | - |
| dc.date.issued | 2009-10-07 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/60825 | - |
| dc.description.abstract | We have shown the post annealing effect on the I-V characteristics of the top-gated SWNT network transistors with alumina oxide (Al2O3) as a gate dielectric material. The dramatic change in the polarity of top-gated SWNT network transistors has been observed by post-annealing. | - |
| dc.title | Post-Annealing effect on the electrical properties of top-gated SWNT network transistors | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | l2009 International Conference on Solid State Devices and Materials | - |
| dc.citation.conferencePlace | 센다이, 일본 | - |
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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Related Researcher
- Park, Wan jun
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)