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Fabrication and characteristic of nitrogen-doepd NiFe free layer for enhanced magnetic tunnel junction devices
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 홍진표 | - |
| dc.date.accessioned | 2021-08-03T21:32:53Z | - |
| dc.date.available | 2021-08-03T21:32:53Z | - |
| dc.date.issued | 2009-08-20 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/61174 | - |
| dc.description.abstract | 1 | - |
| dc.title | Fabrication and characteristic of nitrogen-doepd NiFe free layer for enhanced magnetic tunnel junction devices | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 제37회 한국진공학회 하계 정기학술대회 | - |
| dc.citation.conferencePlace | 디오션리조트 | - |
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