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Precursor dependent rutile phase formation of atomic-layer deposited TiO2 film on Ru electrode for DRAM capacitor applications
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 안진호 | - |
| dc.date.accessioned | 2021-08-03T21:33:50Z | - |
| dc.date.available | 2021-08-03T21:33:50Z | - |
| dc.date.issued | 2009-07-20 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/61255 | - |
| dc.title | Precursor dependent rutile phase formation of atomic-layer deposited TiO2 film on Ru electrode for DRAM capacitor applications | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | ALD 2009(9th international conference on atomic layer deposition) | - |
| dc.citation.conferencePlace | USA | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Ahn, Jinho
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)