Alternative oxidant effects on chemical structure and electrical properties of atomic-layer-deposited La2O3 film on Si using tris(N,N`-diisopropylformamidinato) lanthanum[La(PrfAMD)3]
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 안진호 | - |
dc.date.accessioned | 2021-08-03T21:33:51Z | - |
dc.date.available | 2021-08-03T21:33:51Z | - |
dc.date.issued | 20090720 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/61256 | - |
dc.title | Alternative oxidant effects on chemical structure and electrical properties of atomic-layer-deposited La2O3 film on Si using tris(N,N`-diisopropylformamidinato) lanthanum[La(PrfAMD)3] | - |
dc.type | Conference | - |
dc.citation.conferenceName | ALD 2009(9th international conference on atomic layer deposition) | - |
dc.citation.conferencePlace | USA | - |
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