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Effects of Al2O3 capping layer of La2O3 gate dielectrics grown by remote plasma atomic layer deposition
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 전형탁 | - |
| dc.date.accessioned | 2021-08-03T21:33:55Z | - |
| dc.date.available | 2021-08-03T21:33:55Z | - |
| dc.date.issued | 2009-07-19 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/61262 | - |
| dc.title | Effects of Al2O3 capping layer of La2O3 gate dielectrics grown by remote plasma atomic layer deposition | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | ALD 2009 | - |
| dc.citation.conferencePlace | Monterey, California, USA | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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