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8 An Output-Bandwidth-Optimized 200Gb/s PAM-4 100Gb/s NRZ Transmitter with 5-Tap FFE in 28nm CMOS

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dc.contributor.authorChoi, M.-
dc.contributor.authorWang, Z.-
dc.contributor.authorLee, K.-
dc.contributor.authorPark, K.-
dc.contributor.authorLiu, Z.-
dc.contributor.authorBiswas, A.-
dc.contributor.authorHan, J.-
dc.contributor.authorAlon, E.-
dc.date.accessioned2021-07-30T08:10:15Z-
dc.date.available2021-07-30T08:10:15Z-
dc.date.created2021-07-19-
dc.date.issued2021-02-13-
dc.identifier.issn0193-6530-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/6233-
dc.description.abstractThe ever-expanding demand for ultra-high-speed interconnects has driven the development of wireline TXs operating at >100Gb/s per lane [1]-[4]. This paper presents a PAM-4 TX achieving 200Gb/s with improved output bandwidth and output swing by minimizing the driver capacitance with pull-up current sources, multiplexing with flexible clock timing control, and employing a fully reconfigurable 5-tap FFE architecture. © 2021 IEEE.-
dc.language영어-
dc.language.isoen-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.title8 An Output-Bandwidth-Optimized 200Gb/s PAM-4 100Gb/s NRZ Transmitter with 5-Tap FFE in 28nm CMOS-
dc.typeConference-
dc.contributor.affiliatedAuthorHan, J.-
dc.identifier.scopusid2-s2.0-85102371344-
dc.identifier.bibliographicCitation2021 IEEE International Solid-State Circuits Conference, ISSCC 2021, pp.128 - 130-
dc.relation.isPartOf2021 IEEE International Solid-State Circuits Conference, ISSCC 2021-
dc.relation.isPartOfDigest of Technical Papers - IEEE International Solid-State Circuits Conference-
dc.citation.title2021 IEEE International Solid-State Circuits Conference, ISSCC 2021-
dc.citation.startPage128-
dc.citation.endPage130-
dc.citation.conferencePlaceUS-
dc.citation.conferenceDate2021-02-13-
dc.type.rimsCONF-
dc.description.journalClass1-
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