Resistive switching behaviors in NiFe/MgO/NiFe magnetic tunnel junctions
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 홍진표 | - |
dc.date.accessioned | 2021-08-03T23:22:45Z | - |
dc.date.available | 2021-08-03T23:22:45Z | - |
dc.date.issued | 20080826 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/64066 | - |
dc.description.abstract | 1 | - |
dc.title | Resistive switching behaviors in NiFe/MgO/NiFe magnetic tunnel junctions | - |
dc.type | Conference | - |
dc.citation.conferenceName | 14th international symposium on the physics of semiconductors and applications | - |
dc.citation.conferencePlace | 제주도 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.