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high mobility p-type ZnO:AlN thin films on sapphire substrate with pre-activated nitrogen radicals

Authors
홍진표
Issue Date
20080818
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/64137
Place
제주도
Conference Name
1st internationsl conference on microelectronics and plasma technology
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서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers

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