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고 에너지 전자빔 조사된 n+-p와 n형 GaN의 결함구조 분석

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dc.contributor.author김은규-
dc.date.accessioned2021-08-04T00:22:38Z-
dc.date.available2021-08-04T00:22:38Z-
dc.date.created2021-06-30-
dc.date.issued2008-01-14-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/65536-
dc.publisher나노특화팹센터-
dc.title고 에너지 전자빔 조사된 n+-p와 n형 GaN의 결함구조 분석-
dc.typeConference-
dc.contributor.affiliatedAuthor김은규-
dc.identifier.bibliographicCitation2nd Workshop on the Advanced Technologies of Nitride Semiconductors-
dc.relation.isPartOf2nd Workshop on the Advanced Technologies of Nitride Semiconductors-
dc.citation.title2nd Workshop on the Advanced Technologies of Nitride Semiconductors-
dc.citation.conferencePlace나노특화팹센터-
dc.type.rimsCONF-
dc.description.journalClass2-
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서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers

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