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The Effect of Oxygen Vacancy on the Coerceive Field of Al-doped Hafnium Oxide Ferrroelectric Thin Film during Wake-Up Process
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 최창환 | - |
| dc.date.accessioned | 2021-07-30T08:24:12Z | - |
| dc.date.available | 2021-07-30T08:24:12Z | - |
| dc.date.created | 2021-06-30 | - |
| dc.date.issued | 2020-11-23 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/6684 | - |
| dc.publisher | 한국세라믹학회 | - |
| dc.title | The Effect of Oxygen Vacancy on the Coerceive Field of Al-doped Hafnium Oxide Ferrroelectric Thin Film during Wake-Up Process | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 최창환 | - |
| dc.identifier.bibliographicCitation | 한국세라믹학회 추계학술대회 | - |
| dc.relation.isPartOf | 한국세라믹학회 추계학술대회 | - |
| dc.citation.title | 한국세라믹학회 추계학술대회 | - |
| dc.citation.conferencePlace | 대전 DCC | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 2 | - |
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)