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고이동도 C- 축 정렬 결정 IGZO (CAAC-IGZO)와 High-K 박막 재료를 적용한 플래시 메모리 특성
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 최창환 | - |
| dc.date.accessioned | 2021-07-30T08:24:12Z | - |
| dc.date.available | 2021-07-30T08:24:12Z | - |
| dc.date.issued | 2020-11-23 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/6685 | - |
| dc.title | 고이동도 C- 축 정렬 결정 IGZO (CAAC-IGZO)와 High-K 박막 재료를 적용한 플래시 메모리 특성 | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 한국세라믹학회 추계학술대회 | - |
| dc.citation.conferencePlace | 대전 DCC | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)