Study of Thermal Treatment on Schottkey and Ohmic Contacts of CdZnTe Detector

Abstract

CdZnTe is the most promising material for X-ray and γ-ray detector. The effect of the thermal treatment on the metal contacts of CdZnTe detector was studied. A CdZnTe sample with the size of 10×10×5 mm3 was lapped, mechanically polished, and chemically etched. Three different CdZnTe detectors were fabricated. Indium was evaporated on one side of the CdZnTe sample, and different metal contacts (Au with the evaporation method, Au with the electroless deposition method, and Ni-Au with the evaporation method) were made on the opposite side of the CdZnTe. The I-V curve and the γ-ray response of each detector were measured. The detectors were annealed for 2 hours at 150 oC. The I-V curve and the γ-ray response of each detector were measured again after the thermal treatment