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Electrical properties of NiSi2 nanocrystal formed by rapid thermal annealing
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이승백 | - |
| dc.date.accessioned | 2021-08-04T02:33:42Z | - |
| dc.date.available | 2021-08-04T02:33:42Z | - |
| dc.date.issued | 2006-10-19 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/69127 | - |
| dc.description.abstract | We investigated the charge capacitance of NiSi2 nanocrystals. The NiSi2 films with thickness of few nanometers were deposited onto Si wafers using Rf sputtering method. They were subjected to rapid thermal annealing for various time durations at various temperatures in Ar ambient. The morphologies of the NiSi2 were characterized by SEM and TEM. The C-V measurements were performed to study the electron charging and the discharging effects of the NiSi2 nanocrystals. | - |
| dc.title | Electrical properties of NiSi2 nanocrystal formed by rapid thermal annealing | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 한국물리학회 가을학술논문발표회 | - |
| dc.citation.conferencePlace | 대구 EXCO | - |
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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- Lee, Seung Beck
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)