Electrical properties of NiSi2 nanocrystal formed by rapid thermal annealing

Abstract

We investigated the charge capacitance of NiSi2 nanocrystals. The NiSi2 films with thickness of few nanometers were deposited onto Si wafers using Rf sputtering method. They were subjected to rapid thermal annealing for various time durations at various temperatures in Ar ambient. The morphologies of the NiSi2 were characterized by SEM and TEM. The C-V measurements were performed to study the electron charging and the discharging effects of the NiSi2 nanocrystals.