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Impact of O3 on the Ferroelectric Properties and Its Time-Dependent Deterioration of ALD HfxZr1-xO2 Thin Film

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dc.contributor.author최창환-
dc.date.accessioned2021-07-30T08:28:51Z-
dc.date.available2021-07-30T08:28:51Z-
dc.date.created2021-06-30-
dc.date.issued2020-11-04-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/7082-
dc.publisherKIM-
dc.titleImpact of O3 on the Ferroelectric Properties and Its Time-Dependent Deterioration of ALD HfxZr1-xO2 Thin Film-
dc.typeConference-
dc.contributor.affiliatedAuthor최창환-
dc.identifier.bibliographicCitationThe 6th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE)-
dc.relation.isPartOfThe 6th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE)-
dc.citation.titleThe 6th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE)-
dc.citation.conferencePlace제주 라마다호텔-
dc.type.rimsCONF-
dc.description.journalClass1-
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