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HfO2/SiOxNy/Si 게이트 유전체 구조의 열처리에 따른 열적 안정성과 전기적 특성
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 전형탁 | - |
| dc.date.accessioned | 2021-08-04T04:33:55Z | - |
| dc.date.available | 2021-08-04T04:33:55Z | - |
| dc.date.issued | 2005-08-16 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/72091 | - |
| dc.title | HfO2/SiOxNy/Si 게이트 유전체 구조의 열처리에 따른 열적 안정성과 전기적 특성 | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | Twelfth Canadian Semiconductor Technology Conference | - |
| dc.citation.conferencePlace | Ottawa, Canada | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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