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Fabrication of TaN-gated ultra-thin MOSFETs (EOT <1.0 nm) with HfO2 using a novel oxygen scavenging process for sub 65 nm application
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 최창환 | - |
| dc.date.accessioned | 2021-08-04T04:36:26Z | - |
| dc.date.available | 2021-08-04T04:36:26Z | - |
| dc.date.issued | 2005-06-16 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/72274 | - |
| dc.title | Fabrication of TaN-gated ultra-thin MOSFETs (EOT <1.0 nm) with HfO2 using a novel oxygen scavenging process for sub 65 nm application | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | Symposium on VLSI Technology (VLSI) | - |
| dc.citation.conferencePlace | Kyoto, Japan | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)