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Reliability characteristics of HfO2 gate dielectrics prepared by atomic layer deposition using HfCl4 and TEMAH
- Authors
- 안진호
- Issue Date
- 27-Mar-2005
- Place
- 센프란시스코
- Conference Name
- MRS spring meeting
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Ahn, Jinho
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)