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Electrical properties of ALD-HfO2 using H2O and D2O as an oxidant
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 안진호 | - |
| dc.date.accessioned | 2021-08-04T05:18:33Z | - |
| dc.date.available | 2021-08-04T05:18:33Z | - |
| dc.date.issued | 20050224 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/73112 | - |
| dc.title | Electrical properties of ALD-HfO2 using H2O and D2O as an oxidant | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 제12회 한국반도체학술대회 | - |
| dc.citation.conferencePlace | 코엑스 | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Ahn, Jinho
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)