Magnetoelectric characterization of magnetic tunnel transistors formed by controllable AlO3 and AlN double insulating barriers
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 홍진표 | - |
dc.date.accessioned | 2021-08-04T05:34:16Z | - |
dc.date.available | 2021-08-04T05:34:16Z | - |
dc.date.issued | 20041024 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/73663 | - |
dc.description.abstract | 1 | - |
dc.title | Magnetoelectric characterization of magnetic tunnel transistors formed by controllable AlO3 and AlN double insulating barriers | - |
dc.type | Conference | - |
dc.citation.conferenceName | 한국물리학회 학술대회 | - |
dc.citation.conferencePlace | 제주도 | - |
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