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Electrical and structural properties of AlOx/HfO2 gate oxide stacks prepared by alternatively mixed sputtering process
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 홍진표 | - |
| dc.date.accessioned | 2021-08-04T05:34:18Z | - |
| dc.date.available | 2021-08-04T05:34:18Z | - |
| dc.date.issued | 20041024 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/73665 | - |
| dc.description.abstract | 1 | - |
| dc.title | Electrical and structural properties of AlOx/HfO2 gate oxide stacks prepared by alternatively mixed sputtering process | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 한국물리학회 학술대회 | - |
| dc.citation.conferencePlace | 제주도 | - |
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Collections - 서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers
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Related Researcher
- Hong, Jin Pyo
- COLLEGE OF NATURAL SCIENCES (DEPARTMENT OF PHYSICS)