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Characteristics of InAs quantum dots on a strain-engineered layer

Authors
김은규
Issue Date
10-Dec-2003
Publisher
The Korean Physical Society
Citation
3rd Inter. Conf. on Advanced Materials and Devices
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/74713
Conference Name
3rd Inter. Conf. on Advanced Materials and Devices
Place
JeJu
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서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers

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