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electrical porperties of Al2O3/HfO2 stacked gate oxide formed by an off-axis rf remote plasmas oxidation method
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 홍진표 | - |
| dc.date.accessioned | 2021-08-04T06:23:36Z | - |
| dc.date.available | 2021-08-04T06:23:36Z | - |
| dc.date.issued | 20040315 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/75258 | - |
| dc.title | electrical porperties of Al2O3/HfO2 stacked gate oxide formed by an off-axis rf remote plasmas oxidation method | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | Seoul international symposium on the physics of semiconductors and applications | - |
| dc.citation.conferencePlace | 한국 경주 | - |
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Collections - 서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers
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Related Researcher
- Hong, Jin Pyo
- COLLEGE OF NATURAL SCIENCES (DEPARTMENT OF PHYSICS)