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Performance of high k HfO2 gate oxide prepared by an inductively coupled rf sputtering system at room temperature
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 홍진표 | - |
| dc.date.accessioned | 2021-08-04T06:39:57Z | - |
| dc.date.available | 2021-08-04T06:39:57Z | - |
| dc.date.issued | 2003-10-24 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/75853 | - |
| dc.title | Performance of high k HfO2 gate oxide prepared by an inductively coupled rf sputtering system at room temperature | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2003년도 가을 학술논문발표회 | - |
| dc.citation.conferencePlace | 경북대 | - |
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Collections - 서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers
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Related Researcher
- Hong, Jin Pyo
- COLLEGE OF NATURAL SCIENCES (DEPARTMENT OF PHYSICS)