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Characteristics of ZrO2 and HfO2 Gate Oxides Deposited by Atomic Layer Deposition (ALD) Using Metal Organic Precursors with Various Reactant Gas Sources
- Authors
- 전형탁
- Issue Date
- 20021230
- Place
- Colorado Convention Center, Denver, Colorado
- Conference Name
- 49th AVS International Symposium
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Jeon, Hyeongtag
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)