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ALD로 증착시킨 HfO2/SiON 게이트 유전물질의 특성

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dc.contributor.author안진호-
dc.date.accessioned2021-08-04T07:38:53Z-
dc.date.available2021-08-04T07:38:53Z-
dc.date.issued20021101-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/77283-
dc.titleALD로 증착시킨 HfO2/SiON 게이트 유전물질의 특성-
dc.typeConference-
dc.citation.conferenceName2002년도 한국재료학회 추계학술발표-
dc.citation.conferencePlace배재대학교-
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서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers

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