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Special Analysis of The Nanotopography Effect on Oxide CMP Using Improved Single-Side-Polished Si Wafer
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 전형탁 | - |
| dc.date.accessioned | 2021-08-04T08:24:04Z | - |
| dc.date.available | 2021-08-04T08:24:04Z | - |
| dc.date.issued | 2002-04-19 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/78409 | - |
| dc.title | Special Analysis of The Nanotopography Effect on Oxide CMP Using Improved Single-Side-Polished Si Wafer | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 한국물리학회 봄학술논문발표회 | - |
| dc.citation.conferencePlace | 부산 백스코 | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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