Study of compositional variations of TiAlN films deposited by metal organic atomic layer deposition(MOALD) method

Abstract

We investigated the compositional variations in TiAlN films deposited by atomic layer deposition (ALD) method using tetrakis-dimethyl-amino-titanium (TDMAT) as Ti precursor, dimethylaluminum-hydride-ethylpiperidine (DMAH-EPP) as Al precursor and NH3 as reactant gas. TiAlN film with approximately 1:1:1 stoichiometry was successfully deposited at the temperature about 200 oC with the Ti and Al ratio of 1:1 processing condition. The growth rate of TiAlN film obtained with this ALD system was about 0.4 monolayer per cycle. Carbon contents in most samples were below 5 at.% and slightly increased with increasing the amount of introduced Ti precursor. The Ti and Al ratio in the TiAlN film was decreased with increasing the amount of introduced Ti precursor. From these results, we concluded that the stoichiometry of Ti and Al and carbon content could be adjusted by controlling the amount of Ti and Al precursors during the deposition.