Etching Characteristics of Fine Ta Patterns with Electron Cyclotron Resonance Chlorine Plasma

Abstract

Next Generation Lithography requires masks with new structure fabricated by Si process. We have studied etching characteristics of Ta which is a strong candidate for absorber or scatterer patterns in NGL masks. Many reported Ta etching with mixture gases, but wi performs Ta etching with pure Cl chemistry and got clear 0.2micron lines&spaces patterns through step etching process.