Deposition and Characteristics of Ta, TaNx & Ta4B films for NGL mask application

Abstract

These NGL masks are mainly devided into therr categories by pattern transfer method-relective type, membrane type and stencil type. Among these types of masks, the reflective and membrane type masks require the mstal patterns for contrast formation through scattering or absorption. It is important to control the sterss and micorstructure of the mdtal film to ensure the pattern placement accuracy of the masks. Among the several kinds of metal pattern materials. Ta-based materials show advantages in compatibilty with dry etching and cleaning process with acidic solutions. However, ti is known that the cloumnar structure of the sputter deposition of the masks. In the wxperiment, TaNx and Ta4B films are deposited by using the same deposition system and their properties as pattern materials have been compared with those of pure Ta film