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Microstructural dependence upon MR characteristic of tunneling magnetoresistive.
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김창경 | - |
| dc.date.accessioned | 2021-08-04T09:37:37Z | - |
| dc.date.available | 2021-08-04T09:37:37Z | - |
| dc.date.issued | 20000601 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/80426 | - |
| dc.description.abstract | Tunneling Magnetoresistive(TMR) Junctions consist of ferromagnet/insulator/ferromagnet structure in which TMR ratio changes as a function of an applied magnetic field. It depends upon spin arrangement of ferromagnetics(parallel or anti-parallel) separated by an insulating layer. In order to utilize it commercially we have to control the thickness of crucial importance. We investigated microstructural characteristics of oxide layer during oxidation process and interface morphology to establish reliable and reproducible processing conditions for TMR junction fabrication. | - |
| dc.title | Microstructural dependence upon MR characteristic of tunneling magnetoresistive. | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 제2회 연구원보고서 | - |
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Collections - 서울 교무처 > 서울 창의융합교육원 > 2. Conference Papers
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Related Researcher
- Kim, Chang Kyung
- 서울 부총장(서울) (서울 창의융합교육원)