Microstructural dependence upon MR characteristic of tunneling magnetoresistive.

Abstract

Tunneling Magnetoresistive(TMR) Junctions consist of ferromagnet/insulator/ferromagnet structure in which TMR ratio changes as a function of an applied magnetic field. It depends upon spin arrangement of ferromagnetics(parallel or anti-parallel) separated by an insulating layer. In order to utilize it commercially we have to control the thickness of crucial importance. We investigated microstructural characteristics of oxide layer during oxidation process and interface morphology to establish reliable and reproducible processing conditions for TMR junction fabrication.