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Etching Characteristics of Fine Ta Patterns with Electron cyclotron resonance chlrorine plasma
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 안진호 | - |
| dc.date.accessioned | 2021-08-04T09:40:34Z | - |
| dc.date.available | 2021-08-04T09:40:34Z | - |
| dc.date.issued | 2000-04-24 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/80620 | - |
| dc.description.abstract | We have studied etching characteristics of Ta film using ECR etcher system. Microwave source power, RF bias power, and working pressure were varied to investigate the etch profile. And we have used two step etching method to acquire the good etch profile preventing the microloading effect.l | - |
| dc.title | Etching Characteristics of Fine Ta Patterns with Electron cyclotron resonance chlrorine plasma | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | Proceedings of international joint symposium on Microelectronics and Packaging | - |
| dc.citation.conferencePlace | KIST | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Ahn, Jinho
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)