Etch characteristics of magnetic tunnel junction materials using H₂/NH₃ reactive ion beam
DC Field | Value | Language |
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dc.contributor.author | Kim, Ju Eun | - |
dc.contributor.author | Kim, Doo San | - |
dc.contributor.author | Gill, You Jung | - |
dc.contributor.author | Jang, Yun Jong | - |
dc.contributor.author | Kim, Ye Eun | - |
dc.contributor.author | Cho, Hanna | - |
dc.contributor.author | Won, Bok-Yeon | - |
dc.contributor.author | Kwon, Oik | - |
dc.contributor.author | Yoon, Kukhan | - |
dc.contributor.author | Choi, Jin-Young | - |
dc.contributor.author | Park, JEA GUN | - |
dc.contributor.author | Yeom, Geun Young | - |
dc.date.accessioned | 2021-08-02T08:27:57Z | - |
dc.date.available | 2021-08-02T08:27:57Z | - |
dc.date.created | 2021-05-11 | - |
dc.date.issued | 2021-01 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/8109 | - |
dc.description.abstract | Magnetic tunneling junction (MTJ) materials such as CoFeB, Co, Pt, MgO, and the hard mask material such as W and TiN were etched with a reactive ion beam etching (RIBE) system using H-2/NH3. By using gas mixtures of H-2 and NH3, especially with the H-2/NH3( 2:1) ratio, higher etch rates of MTJ related materials and higher etch selectivities over mask materials (>30) could be observed compared to those etching using pure H-2( no etching) and NH3. In addition, no significant chemical and physical damages were observed on etched magnetic materials surfaces and, for CoPt and MTJ nanoscale patterns etched by the H₂/NH₃( 2:1) ion beam, highly anisotropic etch profiles >83 degrees with no sidewall redeposition could be observed. The higher etch rates of magnetic materials such as CoFeB by the H₂/NH₃( 2:1) ion beam compared to those by H₂ ion beam or NH₃ ion beam are believed to be related to the formation of volatile metal hydrides (MH, M = Co, Fe, etc) through the reduction of M-NHx( x = 1 similar to 3) formed in the CoFeB surface by the exposure to NH₃ ion beam. It is believed that the H₂/NH₃ RIBE is a suitable technique in the etching of MTJ materials for the next generation nanoscale spin transfer torque magnetic random access memory (STT-MRAM) devices. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Etch characteristics of magnetic tunnel junction materials using H₂/NH₃ reactive ion beam | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, JEA GUN | - |
dc.identifier.doi | 10.1088/1361-6528/abb04e | - |
dc.identifier.scopusid | 2-s2.0-85096082259 | - |
dc.identifier.wosid | 000588564800001 | - |
dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.32, no.5, pp.1 - 9 | - |
dc.relation.isPartOf | NANOTECHNOLOGY | - |
dc.citation.title | NANOTECHNOLOGY | - |
dc.citation.volume | 32 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 9 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | Ammonia | - |
dc.subject.keywordPlus | Cobalt compounds | - |
dc.subject.keywordPlus | Etching | - |
dc.subject.keywordPlus | Hydrides | - |
dc.subject.keywordPlus | Ions | - |
dc.subject.keywordPlus | Iron compounds | - |
dc.subject.keywordPlus | Magnesia | - |
dc.subject.keywordPlus | Magnetic materials | - |
dc.subject.keywordPlus | Magnetic storage | - |
dc.subject.keywordPlus | MRAM devices | - |
dc.subject.keywordPlus | Nanomagnetics | - |
dc.subject.keywordPlus | Nanostructured materials | - |
dc.subject.keywordPlus | Oxide minerals | - |
dc.subject.keywordPlus | Platinum alloys | - |
dc.subject.keywordPlus | Random access storage | - |
dc.subject.keywordPlus | Titanium nitride | - |
dc.subject.keywordPlus | Tunnel junctions | - |
dc.subject.keywordPlus | Etch selectivity | - |
dc.subject.keywordPlus | Magnetic random access memory | - |
dc.subject.keywordPlus | Magnetic tunnel junction | - |
dc.subject.keywordPlus | Magnetic tunneling junctions | - |
dc.subject.keywordPlus | Nano-scale patterns | - |
dc.subject.keywordPlus | Physical damages | - |
dc.subject.keywordPlus | Reactive ion beam etching | - |
dc.subject.keywordPlus | Spin transfer torque | - |
dc.subject.keywordPlus | Ion beams | - |
dc.subject.keywordAuthor | reactive ion beam etching (RIBE) | - |
dc.subject.keywordAuthor | magnetic random access memory (MRAM) | - |
dc.subject.keywordAuthor | magnetic tunnel junction (MTJ) | - |
dc.subject.keywordAuthor | x-ray photoelectron spectroscopy (XPS) | - |
dc.subject.keywordAuthor | H-2 | - |
dc.subject.keywordAuthor | NH3 | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1088/1361-6528/abb04e | - |
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