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G(m)- and Swing-Enhanced Colpitts VCO by Optimization of Capacitance Ratio

Authors
Lim, Chang-WooYun, Tae-Yeoul
Issue Date
Oct-2020
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Colpitts oscillator; current-reuse; G(m)-enhanced; startup; swing-enhanced; voltage-controlled oscillator (VCO)
Citation
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.30, no.10, pp.977 - 980
Indexed
SCIE
SCOPUS
Journal Title
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume
30
Number
10
Start Page
977
End Page
980
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/8891
DOI
10.1109/LMWC.2020.3016015
ISSN
1531-1309
Abstract
This letter presents a negative conductance (G(m))- and swing-enhanced Colpitts voltage-controlled oscillator (VCO) based on optimization of the capacitance ratio. In the proposed VCO structure, a current source typically used in conventional VCOs is replaced with an inductor to increase the output voltage swing. A current-reuse configuration is also adopted to decrease power consumption. Theoretical analyses and simulations show that the devised VCO with an optimized capacitance ratio exhibits enhanced G(m) and swing when compared to a conventional VCO. Measurements revealed a phase noise of -129.67 dBc/Hz at a 1-MHz offset frequency from the 2.2-GHz carrier, while power consumption was 2.2 mW from a 1.2-V supply voltage. This resulted in a figure-of-merit of -193.1 dBc/Hz. The proposed device was implemented using a 65-nm CMOS process.
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Yun, Tae Yeoul
COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)
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