Atomic Layer Deposition Process-Enabled Carrier Mobility Boosting in Field-Effect Transistors through a Nanoscale ZnO/IGO Heterojunction
DC Field | Value | Language |
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dc.contributor.author | Seul, Hyeon Joo | - |
dc.contributor.author | Kim, Min Jae | - |
dc.contributor.author | Yang, Hyun Ji | - |
dc.contributor.author | Cho, Min Hoe | - |
dc.contributor.author | Cho, Min Hee | - |
dc.contributor.author | Song, Woo-Bin | - |
dc.contributor.author | Jeong, Jae Kyeong | - |
dc.date.accessioned | 2021-08-02T09:26:13Z | - |
dc.date.available | 2021-08-02T09:26:13Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2020-07 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/9695 | - |
dc.description.abstract | Low-temperature (<= 400 degrees C), stackable oxide semiconductors are promising as an upper transistor ingredient for monolithic three-dimensional integration. The atomic layer deposition (ALD) route provides a low-defect, high-quality semiconducting oxide channel layer and enables accurate controllability of the chemical composition and physical thickness as well as excellent step coverage on nanoscale trench structures. Here, we report a high-mobility heterojunction transistor in a ternary indium gallium zinc oxide system using the ALD technique. The heterojunction channel structure consists of a 10 nm thick indium gallium oxide (IGO) layer as an effective transporting layer and a 3 nm thick, wide band gap ZnO layer. The formation of a two-dimensional electron gas was suggested by controlling the band gap of the IGO quantum well through In/Ga ratio tailoring and reducing the physical thickness of the ZnO film. A field-effect transistor (FET) with a ZnO/In0.83Ga0.17O1.5 heterojunction channel exhibited the highest field-effect mobility of 63.2 +/- 0.26 cm(2)/V s, a low subthreshold gate swing of 0.26 +/- 0.03 V/dec, a threshold voltage of -0.84 +/- 0.85 V, and an I-ON/OFF ratio of 9 x 10(8). This surpasses the performance (carrier mobility of similar to 41.7 +/- 1.43 cm(2)/V s) of an FET with a single In0.83Ga0.17O1.5 channel. Furthermore, the gate bias stressing test results indicate that FETs with a ZnO/In1-xGaxO1.5 (x = 0.25 and 0.17) heterojunction channel are much more stable than those with a single In1-xGaxO1.5 (x = 0.35, 0.25, and 0.17) channel. Relevant discussion is given in detail on the basis of chemical characterization and technological computer-aided design simulation. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Atomic Layer Deposition Process-Enabled Carrier Mobility Boosting in Field-Effect Transistors through a Nanoscale ZnO/IGO Heterojunction | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeong, Jae Kyeong | - |
dc.identifier.doi | 10.1021/acsami.0c06382 | - |
dc.identifier.scopusid | 2-s2.0-85089710469 | - |
dc.identifier.wosid | 000557854700045 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.12, no.30, pp.33887 - 33898 | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 12 | - |
dc.citation.number | 30 | - |
dc.citation.startPage | 33887 | - |
dc.citation.endPage | 33898 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | ELECTRICAL CHARACTERISTICS | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | ENERGY | - |
dc.subject.keywordPlus | OPTIMIZATION | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | ALIGNMENT | - |
dc.subject.keywordPlus | DESIGN | - |
dc.subject.keywordAuthor | heterojunction | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.subject.keywordAuthor | indium gallium oxide | - |
dc.subject.keywordAuthor | zinc oxide | - |
dc.subject.keywordAuthor | field-effect transistor | - |
dc.subject.keywordAuthor | bias stability | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/acsami.0c06382 | - |
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