Multi-level resistance uniformity of double pinned perpendicular magnetic-tunnel-junction spin-valve depending on top MgO barrier thickness
DC Field | Value | Language |
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dc.contributor.author | Jun, Han-Sol | - |
dc.contributor.author | Choi, Jin-Young | - |
dc.contributor.author | Ashiba, Kei | - |
dc.contributor.author | Jung, Sun-Hwa | - |
dc.contributor.author | Park, Miri | - |
dc.contributor.author | Baek, Jong-Ung | - |
dc.contributor.author | Shim, Tae-Hun | - |
dc.contributor.author | Park, Jea Gun | - |
dc.date.accessioned | 2021-08-02T09:26:55Z | - |
dc.date.available | 2021-08-02T09:26:55Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2020-06 | - |
dc.identifier.issn | 2158-3226 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/9760 | - |
dc.description.abstract | In order to utilize perpendicular spin-torque-transfer magnetic-random-access-memory (p-STT MRAM) as a storage class memory, the achievement of performing multi-level-cell (MLC) operation is important in increasing the integration density of p-STT MRAM. For a double pinned perpendicular magnetic tunneling junction spin-valve performing MLC (i.e., four-resistance level) operation, the uniformity in the resistance difference between four-level resistances was investigated theoretically and experimentally. The uniformity in the resistance difference between four-level resistances was strongly dependent on the top MgO tunneling-barrier thickness. Particularly, the most uniform resistance difference between four resistance states could be achieved at a critical top-MgO tunneling thickness (i.e., similar to 1.15 nm). | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Multi-level resistance uniformity of double pinned perpendicular magnetic-tunnel-junction spin-valve depending on top MgO barrier thickness | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jea Gun | - |
dc.identifier.doi | 10.1063/5.0007064 | - |
dc.identifier.scopusid | 2-s2.0-85092910143 | - |
dc.identifier.wosid | 000544097300002 | - |
dc.identifier.bibliographicCitation | AIP ADVANCES, v.10, no.6, pp.1 - 7 | - |
dc.relation.isPartOf | AIP ADVANCES | - |
dc.citation.title | AIP ADVANCES | - |
dc.citation.volume | 10 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 7 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | MAGNETORESISTANCE | - |
dc.subject.keywordPlus | ANISOTROPY | - |
dc.subject.keywordPlus | COFEB | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/5.0007064 | - |
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