Comparison of Si₃N₄-SiO₂ and SiO₂ Insulation Layer for Zero-Bias CMUT Operation Using Dielectric Charging Effects
DC Field | Value | Language |
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dc.contributor.author | Choi, Won Young | - |
dc.contributor.author | Lee, Chang Hoon | - |
dc.contributor.author | Kim, Young Hun | - |
dc.contributor.author | Park, Kwan Kyu | - |
dc.date.accessioned | 2021-08-02T09:28:35Z | - |
dc.date.available | 2021-08-02T09:28:35Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2020-04 | - |
dc.identifier.issn | 0885-3010 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/9899 | - |
dc.description.abstract | In this letter, we report the characteristics of zero-bias capacitive micromachined ultrasonic transducers (CMUTs) in various aspects, considering the transmission and reception sensitivity and evaluation of the long-term stability with ac transmission in immersion. The main idea of the zero-bias CMUT implementation is that the charge is injected by the dielectric charging effects in an insulation layer in the pull-in state. The CMUT was fabricated by a local oxidation of silicon (LOCOS) process, and the insulation layer consists of Si-₃ N-₄ -SiO₂ and SiO₂, which have been commonly used in previous studies. A study on the charging effects is reported to quantitatively observe the voltage shift by charge transfer with time dependence at different temperatures and collapsing time dependence. Therefore, we successfully implemented a zero-bias CMUT with a transmission efficiency of 4.62 kPa/V at a center frequency of 7.53 MHz in Si-₃ N-₄-SiO₂ and a transmission efficiency of 6.78 kPa/V at a center frequency of 7.86 MHz in SiO₂ immersion. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Comparison of Si₃N₄-SiO₂ and SiO₂ Insulation Layer for Zero-Bias CMUT Operation Using Dielectric Charging Effects | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Kwan Kyu | - |
dc.identifier.doi | 10.1109/TUFFC.2019.2950902 | - |
dc.identifier.scopusid | 2-s2.0-85082561115 | - |
dc.identifier.wosid | 000522170700021 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, v.67, no.4, pp.879 - 882 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL | - |
dc.citation.title | IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL | - |
dc.citation.volume | 67 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 879 | - |
dc.citation.endPage | 882 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Acoustics | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Acoustics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | MICROMACHINED ULTRASONIC TRANSDUCERS | - |
dc.subject.keywordAuthor | Dielectrics | - |
dc.subject.keywordAuthor | Sensitivity | - |
dc.subject.keywordAuthor | Insulation | - |
dc.subject.keywordAuthor | Acoustics | - |
dc.subject.keywordAuthor | Silicon | - |
dc.subject.keywordAuthor | Temperature measurement | - |
dc.subject.keywordAuthor | Thermal stability | - |
dc.subject.keywordAuthor | Capacitive micromachined ultrasonic transducer (CMUT) | - |
dc.subject.keywordAuthor | dielectric charging | - |
dc.subject.keywordAuthor | zero bias | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/8890708 | - |
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