Comparison of Si₃N₄-SiO₂ and SiO₂ Insulation Layer for Zero-Bias CMUT Operation Using Dielectric Charging Effects
- Authors
- Choi, Won Young; Lee, Chang Hoon; Kim, Young Hun; Park, Kwan Kyu
- Issue Date
- Apr-2020
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Dielectrics; Sensitivity; Insulation; Acoustics; Silicon; Temperature measurement; Thermal stability; Capacitive micromachined ultrasonic transducer (CMUT); dielectric charging; zero bias
- Citation
- IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, v.67, no.4, pp.879 - 882
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL
- Volume
- 67
- Number
- 4
- Start Page
- 879
- End Page
- 882
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/9899
- DOI
- 10.1109/TUFFC.2019.2950902
- ISSN
- 0885-3010
- Abstract
- In this letter, we report the characteristics of zero-bias capacitive micromachined ultrasonic transducers (CMUTs) in various aspects, considering the transmission and reception sensitivity and evaluation of the long-term stability with ac transmission in immersion. The main idea of the zero-bias CMUT implementation is that the charge is injected by the dielectric charging effects in an insulation layer in the pull-in state. The CMUT was fabricated by a local oxidation of silicon (LOCOS) process, and the insulation layer consists of Si-₃ N-₄ -SiO₂ and SiO₂, which have been commonly used in previous studies. A study on the charging effects is reported to quantitatively observe the voltage shift by charge transfer with time dependence at different temperatures and collapsing time dependence. Therefore, we successfully implemented a zero-bias CMUT with a transmission efficiency of 4.62 kPa/V at a center frequency of 7.53 MHz in Si-₃ N-₄-SiO₂ and a transmission efficiency of 6.78 kPa/V at a center frequency of 7.86 MHz in SiO₂ immersion.
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