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Carrier Transport in Volatile Memory Device with SnO2 Quantum Dots Embedded in a Polyimide Layer Go to Link

Wu, Chaoxing; Li, Fushan; Guo, Tailiang; Kim, Tae Whan

ArticleIssue Date2011CitationJAPANESE JOURNAL OF APPLIED PHYSICS, v.50, no.9, pp.1 - 4PublisherIOP PUBLISHING LTD

SCIESCOPUS

Design of unique NAND flash memory cells with low program disturbance utilizing novel booster line Go to Link

Mun, Kyung Sik; Kim, Jae-Ho; Kim, Tae Whan; Dal Kwack, Kae

ArticleIssue Date2006CitationJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.45, no.6A, pp.4955 - 4959PublisherJAPAN SOC APPLIED PHYSICS

SCIESCOPUS

Enhancement of the electrical characteristics for vertical NAND flash memory devices using a modified array structure Go to Link

An, Sung Woo; Kim, Tae Whan

ArticleIssue Date2017CitationJAPANESE JOURNAL OF APPLIED PHYSICS, v.56, no.4PublisherIOP PUBLISHING LTD

SCIESCOPUS

Nanoscale Two-Bit/Cell NAND Silicon-Oxide-Nitride-Oxide-Silicon Devices Designed on Fully Depleted Silicon-on-Insulator Substrates Go to Link

Kim, Hyun Joo; You, Joo Hyung; Kwack, Kae Dal; Kim, Tae Whan

ArticleIssue Date2010CitationJAPANESE JOURNAL OF APPLIED PHYSICS, v.49, no.9, pp.1 - 4PublisherIOP PUBLISHING LTD

SCIESCOPUS

Electrical Bistability Mechanisms of Organic Bistable Devices Fabricated Utilizing Ni1-xFex Self-Assembled Nanoparticles Embedded in a Polyimide Layer Go to Link

Cho, Sung Hwan; Kim, Won Tae; Jung, Jae Hun; Kim, Tae Whan; Yoon, Chong Seung; Kim, Young-Ho

ArticleIssue Date2010CitationJAPANESE JOURNAL OF APPLIED PHYSICS, v.49, no.1, pp.1 - 4PublisherIOP PUBLISHING LTD

SCIESCOPUS

Effect of Indium-Tin-Oxide Schottky Contact on the Resistance Switching of NiO Film Go to Link

No, Young Soo; Park, Dong-Hee; Lee, Jeon-Kook; Lee, Youn-Seoung; Kim, Tae Whan; Choi, Won-Kook

ArticleIssue Date2013CitationJAPANESE JOURNAL OF APPLIED PHYSICS, v.52, no.5, pp.1 - 5PublisherIOP PUBLISHING LTD

SCIESCOPUS

Enhancement of the electrical characteristics of thin-film transistors with indium-zinc-tin oxide/Ag/indium-zinc-tin oxide multilayer electrodes Go to Link

Oh, Dohyun; Yun, Dong Yeol; Cho, Woon-Jo; Kim, Tae Whan

ArticleIssue Date2014CitationJAPANESE JOURNAL OF APPLIED PHYSICS, v.53, no.8, pp.1 - 3PublisherIOP PUBLISHING LTD

SCIESCOPUS

Enhancement of the Luminance Efficiency due to an Embedded Self-Assembled Monolayer in Organic Light-Emitting Devices Go to Link

Kim, Ki Tae; Jeon, Young Pyo; Seo, Hanmin; Noh, Jaegeun; Kim, Tae Whan

ArticleIssue Date2013CitationJAPANESE JOURNAL OF APPLIED PHYSICS, v.52, no.11, pp.1 - 4PublisherIOP PUBLISHING LTD

SCIESCOPUS

Decrease in Interference Effects between Cells for Metal-Oxide-Nitride-Oxide-Silicon NAND Flash Memory Devices with Metal Spacer Layers Go to Link

Kim, Sung Ho; You, Joo Hyung; Kim, Tae Whan

ArticleIssue Date2011CitationJAPANESE JOURNAL OF APPLIED PHYSICS, v.50, no.7PublisherIOP PUBLISHING LTD

SCIESCOPUS

Effect of Potassium Chloride Concentration on the Structural and Optical Properties of ZnO Nanorods Grown on Glass Substrates Coated with Indium Tin Oxide Film Go to Link

Yang, Hee Yeon; No, Young Soo; Kim, Jin Young; Kim, Tae Whan

ArticleIssue Date2012CitationJAPANESE JOURNAL OF APPLIED PHYSICS, v.51, no.6, pp.1 - 4PublisherIOP PUBLISHING LTD

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