Diode Bridge Embedded AlGaN/GaN Bidirectional Switch
DC Field | Value | Language |
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dc.contributor.author | Park, Bong-Ryeol | - |
dc.contributor.author | Han, Sang-Woo | - |
dc.contributor.author | Cha, Ho-Young | - |
dc.date.available | 2020-07-10T07:21:39Z | - |
dc.date.created | 2020-07-06 | - |
dc.date.issued | 2015-04 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/10066 | - |
dc.description.abstract | We have developed an AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistor (MOSHFET) based bidirectional switch with embedded diode bridges for power switching applications. Four Schottky barrier diodes were embedded in an AlGaN/GaN MOSHFET to minimize the parasitic elements and thus reduce the chip area. The fabricated device functioned as a normally OFF, bidirectional switch, where the gate threshold voltage was similar to 1 V in both forward and reverses modes. The maximum drain current density in forward and reverse operation was similar to 120 mA/mm with the gate voltage of 12 V. The forward and reverse OFF-state breakdown voltages were 861 and 946 V, respectively. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Diode Bridge Embedded AlGaN/GaN Bidirectional Switch | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Cha, Ho-Young | - |
dc.identifier.doi | 10.1109/LED.2015.2398459 | - |
dc.identifier.scopusid | 2-s2.0-84961311012 | - |
dc.identifier.wosid | 000351743900012 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.36, no.4, pp.324 - 326 | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 36 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 324 | - |
dc.citation.endPage | 326 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordAuthor | Bi-directional switch | - |
dc.subject.keywordAuthor | diode bridge | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | metal-oxide-semiconductor heterostructure field-effect-transistor (MOSHFET) | - |
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