P-GaN Gated AlGaN/GaN E-mode HFET Fabricated with Selective GaN Etching Process
DC Field | Value | Language |
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dc.contributor.author | Jang, Won-Ho | - |
dc.contributor.author | Seo, Kwang-Seok | - |
dc.contributor.author | Cha, Ho-Young | - |
dc.date.available | 2021-03-17T06:48:31Z | - |
dc.date.created | 2021-02-26 | - |
dc.date.issued | 2020-12 | - |
dc.identifier.issn | 1598-1657 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/11454 | - |
dc.description.abstract | An O-2 based selective GaN etching process was developed herein for use in p-GaN gated AlGaN/GaN heterojunction field-effect transistor fabrication, where precise control of the p-GaN etching was an important process step that determined the device characteristics. The p-GaN layer was etched by a two-step process: low damage BCl3/Cl-2 plasma etching in conjunction with Cl-2/N-2/O-2 based selective etching. A high selectivity of 53:1 for the p-GaN:AlGaN was achieved by the Cl-2/N-2/O-2 plasma etching. The device fabricated by the optimized etching process exhibited excellent enhancement-mode characteristics, i.e., a threshold voltage of 2.45 V, a specific on-resistance of 5.55 m Omega.cm(2), an on/off ratio of similar to 10(9), and an off-state breakdown voltage of >1100 V. | - |
dc.publisher | IEEK PUBLICATION CENTER | - |
dc.title | P-GaN Gated AlGaN/GaN E-mode HFET Fabricated with Selective GaN Etching Process | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Cha, Ho-Young | - |
dc.identifier.doi | 10.5573/JSTS.2020.20.6.485 | - |
dc.identifier.scopusid | 2-s2.0-85098916066 | - |
dc.identifier.wosid | 000604276100001 | - |
dc.identifier.bibliographicCitation | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.20, no.6, pp.485 - 490 | - |
dc.relation.isPartOf | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.citation.title | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.citation.volume | 20 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 485 | - |
dc.citation.endPage | 490 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordAuthor | AlGaN/GaN heterojunction | - |
dc.subject.keywordAuthor | p-GaN gate | - |
dc.subject.keywordAuthor | selective plasma etching | - |
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