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Improved Stability of AlGaN/GaN Heterojunction Schottky-diode-type Hydrogen Sensor Using Constant Current Source Operation
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Choi, June-Heang | - |
| dc.contributor.author | Kim, Hyungtak | - |
| dc.contributor.author | Cha, Ho-Young | - |
| dc.date.available | 2021-03-17T06:49:24Z | - |
| dc.date.created | 2021-02-26 | - |
| dc.date.issued | 2020-10 | - |
| dc.identifier.issn | 1598-1657 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/11514 | - |
| dc.description.abstract | An AlGaN/GaN heterojunction Schottky-diode-type hydrogen sensor was fabricated with Pd catalyst and exhibited excellent response characteristics. The sensor was operated in two different modes: constant voltage and constant current bias modes. Since the diode current has an exponential relationship with its forward voltage, any small fluctuations or drift in the bias voltage results in large variations in the output current. Using a constant current bias mode of operation thus allowed more stable sensing characteristics for the Schottky-diode-type hydrogen sensor. | - |
| dc.publisher | IEEK PUBLICATION CENTER | - |
| dc.title | Improved Stability of AlGaN/GaN Heterojunction Schottky-diode-type Hydrogen Sensor Using Constant Current Source Operation | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Kim, Hyungtak | - |
| dc.contributor.affiliatedAuthor | Cha, Ho-Young | - |
| dc.identifier.doi | 10.5573/JSTS.2020.20.5.430 | - |
| dc.identifier.scopusid | 2-s2.0-85096362642 | - |
| dc.identifier.wosid | 000591934800003 | - |
| dc.identifier.bibliographicCitation | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.20, no.5, pp.430 - 435 | - |
| dc.relation.isPartOf | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
| dc.citation.title | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
| dc.citation.volume | 20 | - |
| dc.citation.number | 5 | - |
| dc.citation.startPage | 430 | - |
| dc.citation.endPage | 435 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.description.journalRegisteredClass | kci | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordAuthor | AlGaN/GaN heterojunction | - |
| dc.subject.keywordAuthor | Pd catalyst | - |
| dc.subject.keywordAuthor | Schottky-diode-type hydrogen sensor | - |
| dc.subject.keywordAuthor | stability | - |
| dc.subject.keywordAuthor | constant current bias mode | - |
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Related Researcher
- Kim, Hyung tak
- Engineering (Electronic & Electrical Engineering)