Development of Catalytic-CVD SiN(x)Passivation Process for AlGaN/GaN-on-Si HEMTs
DC Field | Value | Language |
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dc.contributor.author | Kang, Myoung-Jin | - |
dc.contributor.author | Kim, Hyun-Seop | - |
dc.contributor.author | Cha, Ho-Young | - |
dc.contributor.author | Seo, Kwang-Seok | - |
dc.date.available | 2021-03-17T06:50:07Z | - |
dc.date.created | 2021-02-26 | - |
dc.date.issued | 2020-09 | - |
dc.identifier.issn | 2073-4352 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/11560 | - |
dc.description.abstract | We optimized a silicon nitride (SiNx) passivation process using a catalytic-chemical vapor deposition (Cat-CVD) system to suppress the current collapse phenomenon of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs). The optimized Cat-CVD SiN(x)film exhibited a high film density of 2.7 g/cm(3)with a low wet etch rate (buffered oxide etchant (BOE) 10:1) of 2 nm/min and a breakdown field of 8.2 MV/cm. The AlGaN/GaN-on-Si HEMT fabricated by the optimized Cat-CVD SiN(x)passivation process, which had a gate length of 1.5 mu m and a source-to-drain distance of 6 mu m, exhibited the maximum drain current density of 670 mA/mm and the maximum transconductance of 162 mS/mm with negligible hysteresis. We found that the optimized SiN(x)film had positive charges, which were responsible for suppressing the current collapse phenomenon. | - |
dc.publisher | MDPI | - |
dc.title | Development of Catalytic-CVD SiN(x)Passivation Process for AlGaN/GaN-on-Si HEMTs | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Cha, Ho-Young | - |
dc.identifier.doi | 10.3390/cryst10090842 | - |
dc.identifier.scopusid | 2-s2.0-85091268271 | - |
dc.identifier.wosid | 000580268000001 | - |
dc.identifier.bibliographicCitation | CRYSTALS, v.10, no.9, pp.1 - 13 | - |
dc.relation.isPartOf | CRYSTALS | - |
dc.citation.title | CRYSTALS | - |
dc.citation.volume | 10 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 13 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Crystallography | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Crystallography | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | ELECTRON-MOBILITY TRANSISTORS | - |
dc.subject.keywordPlus | PASSIVATION | - |
dc.subject.keywordPlus | PECVD | - |
dc.subject.keywordPlus | SI3N4 | - |
dc.subject.keywordPlus | HFETS | - |
dc.subject.keywordPlus | BOND | - |
dc.subject.keywordAuthor | AlGaN | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | high electron mobility transistor | - |
dc.subject.keywordAuthor | catalytic-CVD | - |
dc.subject.keywordAuthor | SiN(x)passivation | - |
dc.subject.keywordAuthor | current collapse | - |
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