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Improved carrier transport properties by I-doping in n-type Cu0.008Bi2Te2.7Se0.3 thermoelectric alloys
- Authors
- Lee, Kyu Hyoung; Kim, Hyun-Sik; Choo, Sung-sil; Shin, Weon Ho; Lim, Jae-Hong; Kim, Sung Wng; Kim, Sang-il
- Issue Date
- Sep-2020
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Thermoelectric; Bi-2(Te,Se)(3); Iodine; Weighted mobility; Effective mass
- Citation
- SCRIPTA MATERIALIA, v.186, pp.357 - 361
- Journal Title
- SCRIPTA MATERIALIA
- Volume
- 186
- Start Page
- 357
- End Page
- 361
- ISSN
- 1359-6462
- Abstract
- The addition of Cu becomes essential in polycrystalline n-type Bi-2(Te,Se)(3)-based alloys since it is known to enhance stability of carrier transport properties as well as thermoelectric performance. However, a way to further optimize is necessary owing to the limited controllability of transport parameters by Cu addition. Herein, we present improved carrier transport properties via I-doping in Cu0.008Bi2Te2.7Se0.3. Weighted mobility and effective mass are increased simultaneously by small amount doping of I at Te/Se-site. As a result, similar to 15% increased power factor and high average thermoelectric figure of merit (zT) of 0.79 were obtained in a wide temperature range. (C) 2020 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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Collections - Graduate School > Materials Science and Engineering > 1. Journal Articles
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