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Low-profile TM incident retrodirective metasurface based on generalized sheet transition conditions and Babinet's principle

Authors
Lee, Sun-GyuLee, Jeong-Hae
Issue Date
May-2020
Publisher
WILEY
Keywords
retrodirective; metasurface; generalized sheet transition conditions (GSTCs); Babinet' s principle; reflection phase
Citation
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, v.62, no.5, pp.1981 - 1986
Journal Title
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
Volume
62
Number
5
Start Page
1981
End Page
1986
URI
https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/11734
DOI
10.1002/mop.32282
ISSN
0895-2477
Abstract
This article presents a method to design low-profile TM incident retrodirective metasurface (RMS). The equivalent circuit model based on generalized sheet transition conditions (GSTCs) and modified Babinet's principle are used to design the unit cell of RMS for full reflection phase coverage (FRPC). The slots on the unitcell and the artificial magnetic conductor (AMC) ground are used for TM wave and low-profile, respectively. The height of the designed RMS is reduced by 50%, compared with previous TM incident RMS. The measured bistatic pattern and efficiency are in good agreement with those of the simulation.
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