High Performance NO2 Gas Sensor Based on Pd-AlGaN/GaN High Electron Mobility Transistors with Thin AlGaN Barrier
DC Field | Value | Language |
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dc.contributor.author | Cuong Van Nguyen | - |
dc.contributor.author | Kim, Hyungtak | - |
dc.date.available | 2021-03-17T06:54:21Z | - |
dc.date.created | 2021-02-26 | - |
dc.date.issued | 2020-04 | - |
dc.identifier.issn | 1598-1657 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/11761 | - |
dc.description.abstract | We investigated the performance of NO2 gas sensors based on AlGaN/GaN high electron mobility transistors (HEMT) with 10 nm AlGaN barrier. The sensors were designed to operate in mu A range to reduce power consumption and realize good sensing performance. The gate area of the HEMT sensor was functionalized using a Pd and Pt catalyst layer for NO2 detection to compare the performance between Pd and Pt catalysts. Pd-functionalized sensors demonstrated better sensing characteristics compared with Pt-functionalized sensors. When the sensors were exposed to 100 ppm of NO2 at 300 degrees C, the relative sensitivity of 53 % was measured with the response time and recovery time of 136 s and 196 s, respectively. Also, the sensor shows a significant change of drain current for 30 s exposure time in different concentrations from 10 to 100 ppm NO2. These results suggest that Pd-AlGaN/GaN HEMT sensors with a thin barrier can be the great choice to detect NO2 gas and they could be used in the harsh environment in real-time condition. | - |
dc.publisher | IEEK PUBLICATION CENTER | - |
dc.title | High Performance NO2 Gas Sensor Based on Pd-AlGaN/GaN High Electron Mobility Transistors with Thin AlGaN Barrier | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Hyungtak | - |
dc.identifier.doi | 10.5573/JSTS.2020.20.2.170 | - |
dc.identifier.scopusid | 2-s2.0-85084915143 | - |
dc.identifier.wosid | 000530108200007 | - |
dc.identifier.bibliographicCitation | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.20, no.2, pp.170 - 176 | - |
dc.relation.isPartOf | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.citation.title | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.citation.volume | 20 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 170 | - |
dc.citation.endPage | 176 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordAuthor | Palladium | - |
dc.subject.keywordAuthor | platinum | - |
dc.subject.keywordAuthor | gallium nitride | - |
dc.subject.keywordAuthor | nitrogen dioxide sensor | - |
dc.subject.keywordAuthor | high electron mobility transistor | - |
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