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Investigation in the Ga2O3 passivation layer formed as GaN Schottky barrier through UV/O-3 treatment
- Authors
- Kim, Kwangeun
- Issue Date
- Mar-2020
- Publisher
- ELSEVIER
- Citation
- RESULTS IN PHYSICS, v.16
- Journal Title
- RESULTS IN PHYSICS
- Volume
- 16
- ISSN
- 2211-3797
- Abstract
- Passivation capability of ultrathin Ga2O3 surface layer formed on GaN through ultraviolet/ozone (UV/O-3) treatment is assessed with an exploration of conduction in GaN Schottky diode (SD). The physical and chemical features of ultrathin oxide layer are analyzed to examine the crystalline property. The passivation of dislocation-related structures by UV/O-3 treatment improves the conduction in GaN SD.
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Related Researcher
- Kim, Kwang eun
- Science & Technology (전자전기융합공학과)